N-ChannelPowerTrenchMOSFET100V,4.5A,62m?

DualN-ChannelPowerTrench®MOSFET100V,4.5A,62mΩ Features •rDS(ON)=54mΩ(Typ.),VGS=10V,ID=4.5A •Qg(tot)=11nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse)

DualN-ChannelPowerTrench짰MOSFET100V,4.5A,62m?

文件：639.1 Kbytes Page：11 Pages

DualN-ChannelPowerTrench짰MOSFET100V,4.5A,62m?

文件：639.1 Kbytes Page：11 Pages

ESDPROTECTIONDIODE4-CHANNELLOWCAPACITANCEARRAY

DESCRIPTION The AZC399isa4channelultralowcapacitancerail protectiondiodesarray.Eachchannelconsistsof diodesthatsteerpositiveornegativeESDcurrent positiveornegativerail.Azenerdiodeisintegrated betweenthepositiveandnegativesupplyrails. Inthetypicalapplic

3.0AMPFASTRECOVERYRECTIFIERS

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

SOFTRECOVERY,FASTSWITCHINGPLASTICRECTIFIER

FEATURES ●Highsurgecurrentcapability ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ●Void-freemoldedplasticpackage ●3.0AmpereoperationatTA=55withnothermalrunaway ●Fastswitchingforhighefficiency ●ExceedsenvironmentalstandardsofMIL-S

3.0AMPS.FASTRECOVRYRECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

FASTSILICONRECTIFIERS???

Features *Lowforwardvoltage *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Lowcost