N-Channel PowerTrench MOSFET 100V, 4.5A, 62m?

Dual N-Channel PowerTrench® MOSFET 100V, 4.5A, 62mΩ Features • rDS(ON)= 54mΩ(Typ.), VGS = 10V, ID= 4.5A • Qg(tot) = 11nC (Typ.), VGS = 10V • Low Miller Charge • Low QRRBody Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse)

分立式商用N沟道PowerTrench MOSFET，100V，4.5A，0.062 Ohms @ VGS = 10V，SO-8封装

Dual N-Channel PowerTrench® MOSFET 100V, 4.5A, 62mΩ •rDS(ON) = 54mΩ （典型值），VGS = 10V，ID = 4.5A\n•Qg(tot) = 11nC （典型值），VGS = 10V\n•低米勒电荷\n•低Qrr体二极管\n•优化高频率时的效率\n•UIS能力（单脉冲和重复脉冲）以前的开发类型82745\n•Formerly developmental type 82745;

Dual N-Channel PowerTrench짰 MOSFET 100V, 4.5A, 62m?

文件：639.1 Kbytes Page：11 Pages

Dual N-Channel PowerTrench짰 MOSFET 100V, 4.5A, 62m?

文件：639.1 Kbytes Page：11 Pages

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d