N-Channel PowerTrench MOSFET 100V, 4.5A, 62m?

Dual N-Channel PowerTrench® MOSFET 100V, 4.5A, 62mΩ Features • rDS(ON)= 54mΩ(Typ.), VGS = 10V, ID= 4.5A • Qg(tot) = 11nC (Typ.), VGS = 10V • Low Miller Charge • Low QRRBody Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse)

Dual N-Channel PowerTrench짰 MOSFET 100V, 4.5A, 62m?

文件：639.1 Kbytes Page：11 Pages

Dual N-Channel PowerTrench짰 MOSFET 100V, 4.5A, 62m?

文件：639.1 Kbytes Page：11 Pages

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d

DMOS Dual Full-Bridge Microstepping PWM Motor Driver

Features and Benefits ▪ ±1.5 A, 50 V continuous output rating ▪ Low RDS(on) DMOS output drivers ▪ Short-to-ground protection ▪ Shorted load protection ▪ Optimized microstepping via six bit linear DACs ▪ Programmable mixed, fast, and slow current decay modes ▪ 4 MHz internal oscillator for d

Nylon Knock Out Seals and Thick Panel Knock Out Seals

文件：128.57 Kbytes Page：1 Pages