P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–11A,–12V RDS(ON)=9mΩ@VGS=–4.5V RDS(ON)=12mΩ@VGS=–2.5V RDS(ON)=16mΩ

AudioBroadcastQuality800ASeries

Features Deep-drawnsteelcasewithtinplatedfinish,withtwoconvenient6-32mountingstuds withhardware. Includeswireleads(minimumlengthof4). Frequencyresponse+/-0.5dbmax.from50Hz.to15Khz. Insertionlossofapx.1db. Maximumpowerlevel+15dbm.(except841A,842A&84

SurfaceMountZenerDiodes

Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage

842SeriesHighTempCardEdgeConnector|Green|0.100(2.54mm)Pitch|0.200(5.08mm)RowSpacing|DeepCardSlot

Features .100(2.54mm)ContactSpacingx.200(5.08mm)RowSpacing Accepts.062(1.57mm)NominalThicknessP.C.Board HighProfileInsulatorBody,.590(14.99mm) ContactTerminationOptionsincludeP.C.Tail,WireHole,WireWrap,90andExtenderBoardBends SingleorDualRowConfigurations

Wideband,HighOutputCurrent,FastSettlingOpAmp

PRODUCTDESCRIPTION TheAD842isamemberoftheAnalogDevicesfamilyofwidebandwidthoperationalamplifiers.ThisdeviceisfabricatedusingAnalogDevices’junctionisolatedcomplementarybipolar(CB)process.Thisprocesspermitsacombinationofdcprecisionandwidebandacperformancepre

Wideband,HighOutputCurrentFastSettlingOpAmp

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