General Description

This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –11 A, –12 V

RDS(ON) = 9 mΩ @ VGS = –4.5 V

RDS(ON) = 12 mΩ @ VGS = –2.5 V

RDS(ON) = 16 mΩ @ VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Applications

• Power management

• Load switch

• Battery protection