isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM， 500 V，5A，1.5Ω，TO-220F

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 UniFET Ultra FRFETTM MOSFET 具有非常卓越的体二极管反向恢复性能。 其 trr 小于 50nsec 且反向 dv/dt 抗扰度为 20V/nsec，而一般的平面 MOSFET 产品分别为 200nsec 以上和 4.5V/nsec。 因此，UniFET Ultra FRFET MOSFET 在要求 MOSFET 体二极管性能改进的某些应用中可消除多余的元件，并提高系统的可靠 •RDS(on) = 1.5Ω （最大值）@ VGS = 10V, ID = 2.5A\n•低栅极电荷（典型值 12.8nC） \n•低 Crss（典型值 9pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力;

500V N-Channel MOSFET

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Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

500V N-Channel MOSFET

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500V N-Channel MOSFET

文件：958.82 Kbytes Page：10 Pages