isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N 沟道 UniFETTM Ultra FRFETTM MOSFET 600V, 4.5A, 2Ω

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

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N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

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Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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N-Channel 600V (D-S) Power MOSFET

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