DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=33A@ TC=25℃ · Drain Source Voltage -VDSS=250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.094Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，UniFETTM，250 V，33 A，94 mΩ，TO-220F

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 94mΩ （最大值）@ VGS = 10V, ID = 16.5A\n•低栅极电荷（典型值 36.8nC） \n•低 Crss（典型值 39pF） \n•100% 经过雪崩击穿测试;

N 沟道 UniFETTM MOSFET 650V，15A，440 mΩ

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。 该 MOSFET 产品专用于降低导通电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 94 mΩ （最大值）（VGS = 10 V、ID = 16.5 A）栅极电荷低（典型值： 36.8 nC）\n•低 Crss（典型值 39 pF）\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

250V N-Channel MOSFET

文件：832.62 Kbytes Page：8 Pages

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

250V N-Channel MOSFET

文件：909.52 Kbytes Page：9 Pages

250V N-Channel MOSFET

文件：909.52 Kbytes Page：9 Pages

250V N-Channel MOSFET

文件：1.62145 Mbytes Page：8 Pages