DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

功率 MOSFET，N 沟道，UniFETTM，250 V，33 A，94 mΩ，TO-220

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 94mΩ （最大值）@ VGS = 10V, ID = 16.5A\n•低栅极电荷（典型值 36.8nC） \n•低 Crss（典型值 39pF） \n•100% 经过雪崩击穿测试;

isc N-Channel MOSFET Transistor

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250V N-Channel MOSFET

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250V N-Channel MOSFET

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250V N-Channel MOSFET

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250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

250V N-Channel MOSFET

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250V N-Channel MOSFET

文件：909.52 Kbytes Page：9 Pages

250V N-Channel MOSFET

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