DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

250V N-Channel MOSFET

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250V N-Channel MOSFET

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isc N-Channel MOSFET Transistor

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功率 MOSFET，N 沟道，UniFETTM，250 V，33 A，94 mΩ，TO-220

250V N-Channel MOSFET

文件：467.14 Kbytes Page：10 Pages

33A, 250V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 33N25 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. The UTC 33N25 is suitable for high voltage synchronous rectifier and DC/DC converters, etc. ■ FEATURES

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 94mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand