PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

丝印代码：FDPF20N50；N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ

Features • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semic

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.23Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

功率 MOSFET，N 沟道，UniFETTM，500 V，20A，230 mΩ，TO-220F

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 230mΩ （典型值）（VGS = 10V，ID = 10A 时）栅极电荷低（典型值：45.6nC)\n•低 Crss（典型值27pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

Power Factor Correction Converter Design

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SMPS MOSFET

Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Charac

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. FEATURES • Repet

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

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