isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500V，9A，850mΩ，TO-220F

N-Channel MOSFET 500V, 9A, 0.85廓

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10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL POWER MOSFET

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10A 500V N-channel enhanced field effect transistor

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10A 500V N-channel enhanced field effect transistor

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500V N-Channel MOSFET Improved dv/dt capability

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