isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500V，9A，850mΩ，TO-220F

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 UniFET FRFET® MOSFET 体二极管的反向恢复性能通过寿命控制方式得到加强。 其 trr 小于 100nsec 且反向 dv/dt 抗扰度为 15V/nsec，而一般的平面 MOSFET 产品分别为 200nsec 以上和 4.5V/nsec。 因此，它在 MOSFET 体二极管性能具有重要作用的某些应用中可消除多余的元件，并提高系统的可靠性。 该器件系列适用于开关电源转换器应用，如功 •RDS(on) = 710mΩ （典型值）@ VGS = 10V, ID = 4.5A\n•低栅极电荷（典型值 18nC） \n•低 Crss（典型值 10pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力\n•符合 RoHS 标准;

N-Channel MOSFET 500V, 9A, 0.85廓

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500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated