位置:首页 > IC中文资料第12445页 > FDP6N60ZU
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDP6N60ZU | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | ||
FDP6N60ZU | N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω | ONSEMI 安森美半导体 | ||
FDP6N60ZU | N-Channel MOSFET, FRFET 600V, 4.5A, 2廓 文件:531.16 Kbytes Page:9 Pages | FAIRCHILD 仙童半导体 | ||
N-Channel MOSFET, FRFET 600V, 4.5A, 2廓 文件:291.16 Kbytes Page:9 Pages | FAIRCHILD 仙童半导体 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied | PHILIPS 飞利浦 |
FDP6N60ZU产品属性
- 类型
描述
- 型号
FDP6N60ZU
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
FSC |
23+ |
NA |
1492 |
专做原装正品,假一罚百! |
|||
FSC |
0118+ |
TO-220 |
886 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
21+ |
TO220 |
1709 |
||||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
FAIRCHILD |
23+ |
TO-220 |
65480 |
||||
FSC |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
FAIRCHILD/仙童 |
21+ |
TO-220 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
F |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
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FDP6N60ZU规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-13
DdatasheetPDF页码索引
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