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FDP6N60ZU

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

FDP6N60ZU

N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω

ONSEMI

安森美半导体

FDP6N60ZU

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

文件:531.16 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

文件:291.16 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied

PHILIPS

飞利浦

FDP6N60ZU产品属性

  • 类型

    描述

  • 型号

    FDP6N60ZU

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω

更新时间:2026-3-17 20:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
FSC
23+
NA
1492
专做原装正品,假一罚百!
FSC
0118+
TO-220
886
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
21+
TO220
1709
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
FAIRCHILD
23+
TO-220
65480
FSC
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
FAIRCHILD/仙童
21+
TO-220
30000
优势供应 实单必成 可13点增值税
F
25+
TOP220
4500
全新原装、诚信经营、公司现货销售

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