位置:首页 > IC中文资料第12445页 > FDP6N60ZU

型号 功能描述 生产厂家 企业 LOGO 操作
FDP6N60ZU

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

FDP6N60ZU

N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω

ONSEMI

安森美半导体

FDP6N60ZU

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

文件:531.16 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

文件:291.16 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied

PHILIPS

飞利浦

FDP6N60ZU产品属性

  • 类型

    描述

  • 型号

    FDP6N60ZU

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω

更新时间:2026-5-18 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
2016+
TO-220
3000
公司只做原装,假一罚十,可开17%增值税发票!
FAIRCHILD/仙童
20+
TO-2203L
36900
原装优势主营型号-可开原型号增税票
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
24+
TO-220
150
只做原装,欢迎询价,量大价优
FSC
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
FAIRCHILD
TO220
9850
一级代理 原装正品假一罚十价格优势长期供货
FAIRCHILD/仙童
14+
TO-220
799
FAIRCHILD/仙童
25+
TO-220
30000
全新原装现货,价格优势
FAIRCHILD
23+
TO-220
2663
原厂原装正品
SECUGEN
22+
QFP
2000
原装正品现货

FDP6N60ZU数据表相关新闻