DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=61A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =41mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

200V N-Channel MOSFET

文件：657.93 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：1.82615 Mbytes Page：7 Pages

Voltage Detector

文件：402.82 Kbytes Page：7 Pages