丝印代码：FDP55N06；N-Channel UniFET™ MOSFET 60 V, 55 A, 22 mΩ

Features • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A • Low Gate Charge ( Typ. 30 nC) • Low Crss ( Typ. 60 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored t

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

功率 MOSFET，N 沟道，UniFETTM，60 V，55 A，22mΩ，TO-220

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 22 mΩ （最大值），需 VGS = 10 V、ID = 27.5 A栅极电荷低（典型值：30nC)\n•低 Crss（典型值60pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

60V N-Channel MOSFET

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60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 55 AMPERES 60 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Desig

TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Desig