TMOS POWER FET 55 AMPERES 60 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

N?묬hannel Power MOSFET

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TMOS POWER FET 55 AMPERES 60 VOLTS

N−Channel Power MOSFET

N?묬hannel Power MOSFET

文件：188.6 Kbytes Page：6 Pages

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 55mΩ ID 6A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

60V N-Channel MOSFET

文件：1.18877 Mbytes Page：10 Pages

60V N-Channel MOSFET

文件：1.18877 Mbytes Page：10 Pages