20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

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SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C

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