isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanc

功率 MOSFET，N 沟道，UniFETTM II，600 V，12 A，650 mΩ，TO-220

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

12 Amps, 600/650 Volts N-CHANNEL MOSFET

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12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.54 Kbytes Page：11 Pages