N 沟道，PowerTrench® MOSFET，80V，211A，3.3mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 2.85mΩ（典型值）@ VGS = 10V, ID = 50A\n•低 FOM RDS(on)*QG\n•低反向恢复电荷，Qrr\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=235A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.2m廓

文件：624.32 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=120A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.2m廓

文件：552.79 Kbytes Page：8 Pages

N-Channel MOSFET

文件：1.87092 Mbytes Page：7 Pages