isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=120A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

N 沟道 PowerTrench® MOSFET 75V，235A，3.2mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 2.5mΩ （典型值）@ VGS = 10V，ID = 75A\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的 RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.2m廓

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=235A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.2m廓

文件：624.32 Kbytes Page：8 Pages

N-Channel MOSFET

文件：1.87092 Mbytes Page：7 Pages