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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
5x7mmLowCostSurfaceMountVCXO ♦FrequencyStabilityto±20PPM ♦+3.3Vdcor+5.0VdcOperation ♦HCMOSOutput ♦OperatingTemperatureto–40°Cto+85°C ♦OutputEnableStandard ♦Tape&ReelPackaging ♦PbFree | CTSCTS Electronic Components 西迪斯西迪斯公司 |  |   | |
7/8diametersingleturn FEATURES •7/8diametersingleturn •Compactsize,advanceddesigntechnology •Offeracosteffectivesolutiontoyourpotentiometerrequirements •Suitablemodelforallindustrialapplications •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 |  | | |
(22.2mm)ConductivePlasticPotentiometer,BushingMountType FEATURES •7/8diametersingleturn •Compactsize,advanceddesigntechnology •Offeracosteffectivesolutiontoyour potentiometerrequirements •Suitablemodelforallindustrialapplications •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
SilverOxideBatteries 文件：73.69 Kbytes Page：1 Pages | ENERGIZEREnergizer Energizer |  | | |
3M??PowerClampBranchConnector 文件：902 Kbytes Page：3 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  | |
FDN357N_Q产品属性
- 类型
描述
- 型号
FDN357N_Q
- 功能描述
MOSFET SSOT-3 N-CH 30V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BB |
20+ |
TO-3-8 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
ZILOG |
2018+ |
SOP18 |
6000 |
全新原装正品现货,假一赔佰 |
|||
NXP/恩智浦 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
Molex(莫仕) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
VISHAY(威世) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
Keystone |
23+ |
6000 |
|||||
10000 |
|||||||
CREE/科锐 |
23+ |
192 |
现货供应 |
||||
TE/泰科 |
22+ |
N/A |
6000 |
代理渠道 |
|||
MICROCHIP |
15+ |
SOP8 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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FDN357N_Q规格书下载地址
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FDN357N_Q数据表相关新闻
DdatasheetPDF页码索引
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