P-Channel 20-V(D-S) MOSFET

Application ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET

丝印代码：338；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features · –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS =

20 V P-Channel Enhancement Mode MOSFET

VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115mΩ RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

P - Channel MOSFET

MOSFET

场效应管

P-Channel 20-V (D-S) MOSFET

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Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45 ● Intermodulation Distortion @ 20

5-Amp Adjustable Regulators

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5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages