P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features · –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS =

20 V P-Channel Enhancement Mode MOSFET

VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115mΩ RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

P-Channel 20-V(D-S) MOSFET

Application ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

P-Channel 20-V (D-S) MOSFET

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Flat screw terminals Medium-duty version with grooved flat terminals, 1-pole

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SAW Devices (Lead Type SAW Filter)

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8-CHANNEL MULTIPLEXER

文件：431.7 Kbytes Page：14 Pages

8-CHANNEL MULTIPLEXER

文件：431.7 Kbytes Page：14 Pages

8-CHANNEL MULTIPLEXER

文件：431.7 Kbytes Page：14 Pages