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BC338晶体管资料
BC338(-16...-40)别名：BC338(-16...-40)三极管、BC338(-16...-40)晶体管、BC338(-16...-40)晶体三极管
BC338(-16...-40)生产厂家：德国AEG公司_德国椤茨标准电器公司_英国Mullard有限
BC338(-16...-40)制作材料：Si-NPN
BC338(-16...-40)性质：通用型 （Uni）_TR
BC338(-16...-40)封装形式：直插封装
BC338(-16...-40)极限工作电压：30V
BC338(-16...-40)最大电流允许值：0.8A
BC338(-16...-40)最大工作频率：<1MHZ或未知
BC338(-16...-40)引脚数：3
BC338(-16...-40)最大耗散功率：0.625W
BC338(-16...-40)放大倍数：
BC338(-16...-40)图片代号：A-23
BC338(-16...-40)vtest：30
BC338(-16...-40)htest：999900
- BC338(-16...-40)atest：0.8
BC338(-16...-40)wtest：0.625
BC338(-16...-40)代换 BC338(-16...-40)用什么型号代替：BC378,BC738,BC838,BC635,3DK4C,
BC338价格
参考价格：￥0.1669
型号：BC33825TA 品牌：Fairchild 备注：这里有BC338多少钱，2025年最近7天走势，今日出价，今日竞价，BC338批发/采购报价，BC338行情走势销售排行榜，BC338报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BC338 | Amplifier Transistor The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i | Motorola 摩托罗拉 |   | |
BC338 | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications??? NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications | SEMTECH 升特 | | |
BC338 | NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP) | SIEMENS 西门子 | | |
BC338 | SWITCHING AND AMPLIFIER APPLICATIONS Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BC338 | Small Signal Transistors (NPN) FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. ♦ These types are also available subdi vided into three groups -16, -25, and -40, according to their DC current | GE GE Industrial Company | | |
BC338 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : IC=800mA. • DC Current Gain : hFE=100~630 (VCE=1V, Ic=100mA). • For Complementary with PNP type BC328. | KECKEC CORPORATION KEC株式会社 | | |
BC338 | SWITCHING AND AMPLIFIER APPLICATIONS SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 | UTC 友顺 | | |
BC338 | Amplifier Transistors Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | |
BC338 | Si-Epitaxial PlanarTransistors General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack | Diotec 德欧泰克 | | |
BC338 | NPN Plastic-Encapsulate Transistors FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage V(BR)CBO : BC337 50 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
BC338 | NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. | SEMTECH_ELEC 先之科半导体 | | |
BC338 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 | | |
BC338 | TO-92 Plastic-Encapsulate Transistors (NPN) TRANSISTOR (NPN) FEATURES ● Power dissipation | TGS | | |
BC338 | NPN SILICON AF MEDIUM POWER TRANSISTOR THE BC337, BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327, BC328 RESPECTIVELY. | MICRO-ELECTRONICS | | |
BC338 | NPN General Purpose Transistor
| WEITRON | | |
BC338 | NPN Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BC338 | Switching and Amplifier Applications Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BC338 | TRANSISTOR (NPN) FEATURES • High Current : IC=800mA. • DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). • For Complementary with PNP type BC327. | FS | | |
BC338 | Switching and Amplifier Applications Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BC338 | Switching and Amplifier Applications Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BC338 | SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier | CDIL | | |
BC338 | Silicon NPN transistor in a TO-92(R) Plastic Package 文件：729.81 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
BC338 | TRANSISTOR (NPN) 文件：128.07 Kbytes Page：1 Pages | WINNERJOIN 永而佳 | | |
BC338 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | |
BC338 | Switching and Amplifier Applications 文件：61.47 Kbytes Page：2 Pages | SYC | | |
BC338 | 封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS NPN 25V 0.8A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BC338 | TRANSISTOR (NPN) 文件：243.4 Kbytes Page：3 Pages | KOOCHIN 灏展电子 | | |
BC338 | SWITCHING AND AMPLIFIER APPLICATIONS 文件：148.4 Kbytes Page：3 Pages | UTC 友顺 | | |
BC338 | EPITAXIAL PLANAR NPN TRANSISTOR 文件：343.79 Kbytes Page：2 Pages | KECKEC CORPORATION KEC株式会社 | | |
BC338 | SWITCHING AND AMPLIFIER APPLICATIONS 文件：117.48 Kbytes Page：3 Pages | UTC 友顺 | | |
BC338 | General Purpose Si-Epitaxial Planar Transistors 文件：105.98 Kbytes Page：2 Pages | Diotec 德欧泰克 | | |
BC338 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR 文件：215.03 Kbytes Page：1 Pages | DCCOM | | |
SWITCHING AND AMPLIFIER APPLICATIONS Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Si-Epitaxial PlanarTransistors General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack | Diotec 德欧泰克 | | ||
Amplifier Transistor The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i | Motorola 摩托罗拉 | | ||
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP) | SIEMENS 西门子 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 | | ||
NPN Plastic-Encapsulate Transistors Features • Halogen free available upon request by adding suffix -HF • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering inform | MCC 美微科 | | ||
NPN Transistor Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halog | TSC 台湾半导体 | | ||
SWITCHING AND AMPLIFIER APPLICATIONS Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Amplifier Transistor The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i | Motorola 摩托罗拉 | | ||
Si-Epitaxial PlanarTransistors General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack | Diotec 德欧泰克 | | ||
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP) | SIEMENS 西门子 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 | | ||
NPN Transistor Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halog | TSC 台湾半导体 | | ||
Amplifier Transistors Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
NPN Plastic-Encapsulate Transistors Features • Halogen free available upon request by adding suffix -HF • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering inform | MCC 美微科 | | ||
BC337 / BC338 NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC327 / BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
NPN Epitaxial Silicon Transistor Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Amplifier Transistors Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
SWITCHING AND AMPLIFIER APPLICATIONS Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 (PNP) | SIEMENS 西门子 | | ||
Amplifier Transistor The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i | Motorola 摩托罗拉 | | ||
Si-Epitaxial PlanarTransistors General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack | Diotec 德欧泰克 | | ||
NPN Plastic-Encapsulate Transistors Features • Halogen free available upon request by adding suffix -HF • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering inform | MCC 美微科 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | JIANGSU 长电科技 | | ||
NPN Transistor Small Signal Product Features ◇ For switching and AF amplifier applications ◇ These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇ Moisture sensitivity level 1 ◇ Driver transistor ◇ Pb free version and RoHS compliant ◇ Green compound (Halog | TSC 台湾半导体 | | ||
SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier | CDIL | | ||
General Purpose Si-Epitaxial Planar Transistors General Purpose Si-Epitaxial Planar Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Special packaging bulk | Diotec 德欧泰克 | | ||
EPITAXIAL PLANAR NPN TRANSISTOR 文件：343.79 Kbytes Page：2 Pages | KECKEC CORPORATION KEC株式会社 | |
BC338产品属性
- 类型
描述
- 型号
BC338
- 功能描述
两极晶体管 - BJT NPN 25V 800mA HFE/63
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
TO263 |
7674 |
公司现货库存,支持实单 |
|||
HGF/恒光发 |
24+ |
NA/ |
13267 |
原装现货,当天可交货,原型号开票 |
|||
onsemi(安森美) |
24+ |
TO-92-3 |
2317 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
HGF |
25+ |
TO-92 |
50000 |
原装正品,假一罚十! |
|||
GI |
24+/25+ |
4000 |
原装正品现货库存价优 |
||||
ON |
23+ |
TO-92 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CJ/长电 |
24+ |
TO-92 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
SANKEN |
21+ |
TO92 |
48 |
原装现货假一赔十 |
|||
长电 |
23+ |
TO92 |
7300 |
专注配单,只做原装进口现货 |
|||
CJ/长电 |
21+ |
TO-92 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
BC338规格书下载地址
BC338参数引脚图相关
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- BC355(A,B,C)
- BC354
- BC352(A,B,L)
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- BC351(A,B,L)
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- BC348(A,B,L)
- BC347(A,B,L)
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- BC340(-6...-16)
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- BC338-01
- BC338(-16...-40)
- BC337M
- BC337G
- BC337A
- BC33740
- BC33725
- BC33716
- BC337-01
- BC337(-16...-40)
- BC337
- BC336
- BC335
- BC334
- BC333
- BC332(A,B,C)
- BC331(A,B,C)
- BC330(B,C)
- BC32F5
- BC32F3
- BC32F1
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- BC32E3
- BC32E1
- BC32C5
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- BC32C1
- BC329(B,C)
- BC32840
- BC32825
- BC32816
- BC328-01
- BC328(-16...-40)
- BC328
- BC327-01
- BC327(-16...-40)
- BC326
- BC325
- BC324
- BC323
- BC322(B,C)
- BC321(A,B,C)
BC338数据表相关新闻
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2019-8-22BC10-工业控制IC
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2012-12-4
DdatasheetPDF页码索引
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