BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF338 is Designed for High Power Amplifiers in 400 to 512 MHz Military Communication Equipment. FEATURES: • PG = 8.8 dB Typical at 470 MHz • Internal Input Matching Network • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

BROADBAND RF POWER TRANSISTOR NPN SILICON

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45 ● Intermodulation Distortion @ 20

5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages

5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages