N-Channel 30 V (D-S) MOSFET

Features High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. VDS (V) = 30V D= 2.2A (VGS=4.5V) RDS(ON)

N-Channel 30 V (D-S) MOSFET

Features High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. VDS (V) = 30V D= 2.2A (VGS=4.5V) RDS(ON)

N-Channel MOSFET

Features VDS (V) =30 V ID = 2.2 A RDS(ON) = 0.065Ω @ VGS = 4.5 V RDS(ON) = 0.082Ω @ VGS = 2.5 V

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

Contains all support circuitry needed for the ADS1146/ADS1246

文件：2.33022 Mbytes Page：27 Pages

Contains all support circuitry needed for the ADS1148/ADS1248

文件：1.83652 Mbytes Page：34 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.85533 Mbytes Page：9 Pages

PISTON/ROD SEALS

DESCRIPTION The BECA 337 profile is a single acting symmetrical seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 339 profile is specially designed for applications where the seal is in contact with food products. It is chara

T-1 3/4 STANDARD MIDGET GROOVE

文件：335.2 Kbytes Page：1 Pages

Work horse clamp with increased performance and flexibility

文件：97.97 Kbytes Page：2 Pages

Wide Input Range, 3W Single & Dual Output DC/DC Converters

文件：166.82 Kbytes Page：2 Pages

Rail-to-rail output voltage

文件：835.41 Kbytes Page：18 Pages