N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

N-Channel 30 V (D-S) MOSFET

Features High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. VDS (V) = 30V D= 2.2A (VGS=4.5V) RDS(ON)

N-Channel MOSFET

Features VDS (V) =30 V ID = 2.2 A RDS(ON) = 0.065Ω @ VGS = 4.5 V RDS(ON) = 0.082Ω @ VGS = 2.5 V

30V N-Channel MOSFET

30V N MOSFET

场效应管

Contains all support circuitry needed for the ADS1146/ADS1246

文件：2.33022 Mbytes Page：27 Pages

Contains all support circuitry needed for the ADS1148/ADS1248

文件：1.83652 Mbytes Page：34 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.85533 Mbytes Page：9 Pages

PISTON/ROD SEALS

DESCRIPTION The BECA 337 profile is a single acting symmetrical seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 339 profile is specially designed for applications where the seal is in contact with food products. It is chara

Work horse clamp with increased performance and flexibility

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T-1 3/4 STANDARD MIDGET GROOVE

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Wide Input Range, 3W Single & Dual Output DC/DC Converters

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Rail-to-rail output voltage

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