N-Channel 2.5 V (D-S) MOSFET

Features VDS (V) = 20V RDS(ON)

N-Channel 2.5 V (D-S) MOSFET

Applications Load switch Battery protection Power management Features VDS (V) = 20V RDS(ON)

N-Channel 2.5 V (D-S) MOSFET

Applications Load switch Battery protection Power management Features VDS (V) = 20V RDS(ON)

N-Channel 1.8 Vgs Specified PowerTrench® MOSFET

General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications · Load switch · Battery protection · Power management Features · 2 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 80

N-Channel 2.5 V (D-S) MOSFET

Features VDS (V) = 20V RDS(ON)

N-Channel 1.8 Vgs Specified PowerTrench MOSFET

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N 沟道，1.8V 指定，PowerTrench® MOSFET，20V，2A，72mΩ

Socket terminal strip Screw connection, with raised base

The socket terminal strip 327-FU with raised base and a pitch of 14,5 mm is available in 1 to 12 pole design. The raised base extends the creepage distance to the ground which allows 600 V in accordance with UL and CSA regulations without an additional insulating base. One fixing hole is locat

Jumper Accessories

The jumper 327-J electrically bridges adjacent poles of series 326 and 327 terminals. It is available in 14 mm pitch with 2 to 12 poles. Just like the lead, it is connected to the clamping units. The jumper shell is insulated.

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.13 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.21 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis

Socket terminal strip Screw connection

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Crystal Clock Oscillators

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