The RF Line Controlled ?쏲??Broadband Power Transistor 80W, 100 to 500MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed performance @ 400 MHz, 28 Vdc Output power = 80 W over 225 to 400 MHz Band Minimum gain = 7.3 dB @ 400 MHz • Built–in matching network for broadband operation using

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

The RF Line Controlled ?쏲??Broadband Power Transistor

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封装/外壳：316-01 包装：散装 描述：RF TRANS NPN 33V 316-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans GP BJT NPN 33V 9A 4-Pin Case 316-01

Bipolar

The RF Line Controlled Broadband Power Transistor

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The RF Line Controlled ?쏲??Broadband Power Transistor

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Socket terminal strip Screw connection, with raised base

The socket terminal strip 327-FU with raised base and a pitch of 14,5 mm is available in 1 to 12 pole design. The raised base extends the creepage distance to the ground which allows 600 V in accordance with UL and CSA regulations without an additional insulating base. One fixing hole is locat

Jumper Accessories

The jumper 327-J electrically bridges adjacent poles of series 326 and 327 terminals. It is available in 14 mm pitch with 2 to 12 poles. Just like the lead, it is connected to the clamping units. The jumper shell is insulated.

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.13 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.21 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis

Socket terminal strip Screw connection

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Crystal Clock Oscillators

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