The RF Line Controlled ?쏲??Broadband Power Transistor 80W, 100 to 500MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed performance @ 400 MHz, 28 Vdc Output power = 80 W over 225 to 400 MHz Band Minimum gain = 7.3 dB @ 400 MHz • Built–in matching network for broadband operation using

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

Bipolar

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. ·Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz\n·Characterized for 100 =8 500 MHz\n·Gold Metallization System for High Reliability applications\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR\n·Built–In ;

The RF Line Controlled ?쏲??Broadband Power Transistor

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封装/外壳：316-01 包装：散装 描述：RF TRANS NPN 33V 316-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans GP BJT NPN 33V 9A 4-Pin Case 316-01

The RF Line Controlled Broadband Power Transistor

文件：239.04 Kbytes Page：6 Pages

The RF Line Controlled ?쏲??Broadband Power Transistor

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丝印代码：C327；PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

Amplifier Transistors(PNP)

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time