丝印代码：327；N-Channel 1.8 Vgs Specified PowerTrench® MOSFET

General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications · Load switch · Battery protection · Power management Features · 2 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 80

丝印代码：327；N-Channel 2.5 V (D-S) MOSFET

Features VDS (V) = 20V RDS(ON)

丝印代码：327；N-Channel 2.5 V (D-S) MOSFET

Applications Load switch Battery protection Power management Features VDS (V) = 20V RDS(ON)

N 沟道，1.8V 指定，PowerTrench® MOSFET，20V，2A，72mΩ

该20V N沟道MOSFET采用飞兆高压PowerTrench工艺制成。 已针对电源管理应用进行了优化。 •2A、20 V\n•RDS(ON) = 70 mΩ @ VGS = 4.5 V\n•RDS(ON) = 80 mΩ @ VGS = 2.5 V\n•RDS(ON) = 120 mΩ @ VGS = 1.8 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

N-Channel 1.8 Vgs Specified PowerTrench MOSFET

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Amplifier Transistors(PNP)

丝印代码：C327；PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC337. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz • Bu

Silicon NPN Transistor Power Amp, Switch

Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: ● High Collector–Emitter Sustaining Voltage ● High DC Current Gain ● Low Collector–Emitter Saturation Voltage ● Fast Switching Time