Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m

General Description This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. Features ■ Ma

Dual N-Channel PowerTrench짰 MOSFET

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双 N 沟道，Power Trench® MOSFET，20V，3.8A，66mΩ

In-System Programmable High Density PLD

Description The ispLSI 1024/883 is a High-Density Programmable Logic Device processed in full compliance to MIL-STD-883. This military grade device contains 144 Registers, 48 Universal I/O pins, six Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Featu

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

In-System Programmable High Density PLD

Description The ispLSI 1024EA is a High Density Programmable Logic Device containing 144 Registers, 48 Universal I/O pins, two Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Features • HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 48 I/O

Pulse Transformers

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SM BATTERY HOLDER AA, ON TAPE

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