General Description

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.

Features

■ Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A

■ Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A

■ Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A

■ Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A

■ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

■ Free from halogenated compounds and antimony oxides

■ HBM ESD protection level > 1600 V (Note 3)

■ RoHS Compliant

Applications

■ Baseband Switch

■ Load Switch