P 沟道，Power Trench® MOSFET，-30V，-20A，10mΩ

FDMC6679AZ设计用于最大限度地降低负载开关应用中的损耗。 先进的硅技术和封装技术完美融合，提供了最低rDS(on)和ESD保护。 •VGS = -10 V，ID = -11.5 A时，最大rDS(on) = 10 mΩ\n•VGS = -4.5 V，ID = -8.5 A时，最大rDS(on) = 18mΩ\n•HBM ESD保护等级典型值为8kV（注3）\n•为电池应用提供了扩展的VGSS电压范围(-25 V)\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力\n•终端无引线且符合RoHS标准;

P-Channel PowerTrench짰 MOSFET -30 V, -20 A, 10 m廓

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30 Volt P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

30 Volt P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

Direct Conversion FSK Data Receiver

Direct Conversion FSK Data Receiver The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a demodulated data stream. Adjacent channel rejection is provided using tuneable gyr

128-common x 132-segment BIT MAP LCD DRIVER

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128-common x 132-segment BIT MAP LCD DRIVER

文件：598.5 Kbytes Page：46 Pages