丝印代码：FDMC3612；MOSFET ??N-Channel, POWERTRENCH

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丝印代码：FDMC3612；MOSFET ??N-Channel, POWERTRENCH

文件：577.35 Kbytes Page：10 Pages

N 沟道，Power Trench® MOSFET，100V，12A，110mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越开关性能而定制的。 •VGS = 10V，ID = 3.3 A时，最大rDS(on) = 110mΩ\n•VGS = 6 V，ID = 3.0 A时，最大rDS(on) = 122mΩ\n•薄型 - 最大1 mm，采用Power 33封装\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel MOSFET

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N-Channel Power Trench짰 MOSFET

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N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. •Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A\n• Low Conduction loss\n•Low Profile - 1 mm max in Power 33\n• Small Footprint\n•Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A\n•100% UIL Tested \n•RoHS Compliant;

Pre-power amplifier for headphone stereos

The BA3612AKV is configured of a pre-amplifier and a headphone amplifier, and contains internal AMS, B.B, AVLS, and BEEP amplifier functions. Also, this IC can be used in combination with the BA3641FV to enable configuration of recording and playback sets. Features 1) Low current consumption. 2

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switchin

3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

丝印代码：BNR；3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC

OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS description The R3612 is a dual forward-conducting buffered p-gate over voltage protector in a plastic DIP package. It is designed to protect the Ericsson Components PBA 3357/3 DCLIC (Dual Channel Complete Line Interface Circ