N-Channel PowerTrench MOSFET

Features • rDS(ON) = 3.6mΩ (Typ.), VGS = 4.5V, ID = 35A • Qg(5) = 48nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 12V Automotive Load Control • Starter / Alternator Systems • Electr

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=21A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

N-Channel PowerTrench MOSFET

Features • rDS(ON) = 3.6mΩ (Typ.), VGS = 4.5V, ID = 35A • Qg(5) = 48nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 12V Automotive Load Control • Starter / Alternator Systems • Electr