isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 80A RDS(ON)

N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

General Description This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener haS been added to enhance ESD voltage level. Features - Typ rDS(on) = 5mΩ at VGS

N-Channel PowerTrench짰 MOSFET 40V, 50A, 6.7m廓

文件：276.87 Kbytes Page：7 Pages

N 沟道，Power Trench® MOSFET，40V，50A，6.7mΩ

N-Channel Power Trench짰 MOSFET

文件：417.97 Kbytes Page：7 Pages

N-Channel Power Trench짰 MOSFET 40V, 50A, 6.5m廓

文件：417.97 Kbytes Page：7 Pages

Portable Cordage, 3 C #18 Str TC, EPDM Ins, Rubber Jkt, UL Type SV

Product Description Portable Cordage, 3 Conductor 18AWG (41x34) Tinned Copper, EPDM Insulation, Rubber Outer Jacket, UL Type SV

isc N-Channel MOSFETTransistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Heyco-Flex™ II Liquid Tight Tubing

文件：190.09 Kbytes Page：1 Pages

Choke EMC Suppression Choke

文件：96.8 Kbytes Page：1 Pages

N-Channel PowerTrench짰 MOSFET

文件：253.29 Kbytes Page：6 Pages