General Description

This N-Channel MOSFET is produced using ON

Semiconductor’s advanced PowerTrench® process that

has been especially tailored to minimize the

on-state resistance and switching loss. G-S zener haS

been added to enhance ESD voltage level.

Features

- Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A

- Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A

- HBM ESD protection level > 7kv typical

- RoHS Compliant

- Qualified to AEC Q101

Applications

- Inverter

- Synchronous Rectifier