FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 ?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，UniFETTM II，600 V，3.4 A，2.5 Ω，DPAK

N-Channel MOSFET 600V, 3.4A, 2.5

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4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

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4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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N-CHANNEL POWER MOSFET

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