P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

P-Channel PowerTrench짰 MOSFET -20V, -4A, 100m廓

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

N 和 P 沟道，PowerTrench® MOSFET，20V

N- and P-Channel V (D-S) MOSFET

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P 沟道，PowerTrench® MOSFET，2.5V 指定，-20 V，-4.0 A，65mΩ

P 沟道，PowerTrench® MOSFET，-20V，-4A，100mΩ

Precision, Low Cost Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD642 is a pair of matched high speed monolithic BiFET operational amplifier fabricated with the most advanced bipolar, JFET and laser trimming technologies. The AD642 offers matched bias currents that are significantly lower than currently available monolithic dual FET

Precision, Low Cost Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD642 is a pair of matched high speed monolithic BiFET operational amplifier fabricated with the most advanced bipolar, JFET and laser trimming technologies. The AD642 offers matched bias currents that are significantly lower than currently available monolithic dual FET

Precision, Low Cost Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD642 is a pair of matched high speed monolithic BiFET operational amplifier fabricated with the most advanced bipolar, JFET and laser trimming technologies. The AD642 offers matched bias currents that are significantly lower than currently available monolithic dual FET

One-Port SAW

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Class H/K, J and R ferrule and blade fuse reducers

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