P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

丝印代码：FDC642P；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

丝印代码：FDC642P；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

丝印代码：420；20V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features · Q13.0 A, 20V. RDS(ON)= 70 mW@ VGS

N 和 P 沟道，PowerTrench® MOSFET，20V

这些N和P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件经过专门设计，能在极小的空间内实现优异的功率耗散，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •Q1 3.0 A，20V\n•RDS(on) = 70 mΩ@ VGS = 4.5 V\n•RDS(on) = 95 mΩ @ VGS = 2.5 V\n•Q2 –2.2 A，20V。\n•RDS(on) = 125 mΩ@ VGS = -4.5 V\n•RDS(on) = 190 mΩ @ VGS = 2.5 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT –6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。;

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20 V，-4.0 A，65mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能以极小的尺寸提供出色的功耗，适合那些不宜采用更大封装的应用。 •VGS = -4.5V，ID = -4.0A时，最大rDS(on) = 65mΩ\n•VGS = -2.5V，ID = -3.2A时，最大rDS(on) = 100mΩ\n•快速开关速度。\n•低栅极电荷（典型值11nC）。\n•高性能沟道技术可实现极低的rDS(ON)。\n•SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）\n•终端无引线且符合RoHS标准;

P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

P-Channel PowerTrench짰 MOSFET -20V, -4A, 100m廓

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

P 沟道，PowerTrench® MOSFET，-20V，-4A，100mΩ

P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ •典型 rDS(on) = 52.5 mΩ （VGS = –4.5 V、ID = –4A）\n•典型 rDS(on) = 75.3 mΩ （VGS = –2.5 V、ID = –3.2 A）\n•快速开关速度\n•低栅极电荷（6.9nC典型值）\n•高性能沟道技术可实现极低的rDS(on)\n•SuperSOTÞ–封装：小尺寸（比标准 SO-8 小 72%）；超薄（1 mm 厚）。\n•符合 RoHS 标准\n•符合 AEC Q101;

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

N- and P-Channel V (D-S) MOSFET

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Low On-Resistance Wideband/Video Switches

DESCRIPTION The DG641, DG642, DG643 are high performance monolithic video switches designed for switching wide bandwidth analog and digital signals. DG641 is a quad SPST, DG642 is a single SPDT, and DG643 is a dual SPDT function. These devices have exceptionally low on-resistances (5 Ω typ-DG64

SMALL SIGNAL NPN TRANSISTOR

SMALL SIGNAL NPN TRANSISTOR ■ SILICON EPITAXIALPLANAR NPN TRANSISTOR ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER ■ PNP COMPLEMENT IS SO692

Automotive Wipe/Wash or Interval Switch

Description As a convenience feature of the windshield wiper intermittent and wipe/wash operation are implemented in most of the automobiles. The U642B controls all timing functions accurately at a reasonable price level. Interval pause and afterwiping time can be set to fixed values with the h

Automotive Wipe/Wash or Interval Switch

Description As a convenience feature of the windshield wiper intermittent and wipe/wash operation are implemented in most of the automobiles. The U642B controls all timing functions accurately at a reasonable price level. Interval pause and afterwiping time can be set to fixed values with the h

Military DC-DC Power Supplies

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