丝印代码：FDC642P；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

丝印代码：FDC642P；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features • Typ RDS(on) = 52.5 m at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 m at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOT−6 Package: Small Footprint (72 Smaller than S

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20 V，-4.0 A，65mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能以极小的尺寸提供出色的功耗，适合那些不宜采用更大封装的应用。 •VGS = -4.5V，ID = -4.0A时，最大rDS(on) = 65mΩ\n•VGS = -2.5V，ID = -3.2A时，最大rDS(on) = 100mΩ\n•快速开关速度。\n•低栅极电荷（典型值11nC）。\n•高性能沟道技术可实现极低的rDS(ON)。\n•SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）\n•终端无引线且符合RoHS标准;

P-Channel 2.5V Specified PowerTrench?줞OSFET

P-Channel 2.5V Specified PowerTrench™ MOSFET

P-Channel PowerTrench짰 MOSFET -20V, -4A, 100m廓

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A ■ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A ■ Fast switching speed ■ Low gate charge(6.9nC typical) ■ High performance trench technology for extremely low rDS(on) ■ SuperSOTTM-6 package:small footprint(72 smaller than standard SO

P 沟道，PowerTrench® MOSFET，-20V，-4A，100mΩ

P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ •典型 rDS(on) = 52.5 mΩ （VGS = –4.5 V、ID = –4A）\n•典型 rDS(on) = 75.3 mΩ （VGS = –2.5 V、ID = –3.2 A）\n•快速开关速度\n•低栅极电荷（6.9nC典型值）\n•高性能沟道技术可实现极低的rDS(on)\n•SuperSOTÞ–封装：小尺寸（比标准 SO-8 小 72%）；超薄（1 mm 厚）。\n•符合 RoHS 标准\n•符合 AEC Q101;

Low On-Resistance Wideband/Video Switches

DESCRIPTION The DG641, DG642, DG643 are high performance monolithic video switches designed for switching wide bandwidth analog and digital signals. DG641 is a quad SPST, DG642 is a single SPDT, and DG643 is a dual SPDT function. These devices have exceptionally low on-resistances (5 Ω typ-DG64

SMALL SIGNAL NPN TRANSISTOR

SMALL SIGNAL NPN TRANSISTOR ■ SILICON EPITAXIALPLANAR NPN TRANSISTOR ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER ■ PNP COMPLEMENT IS SO692

Automotive Wipe/Wash or Interval Switch

Description As a convenience feature of the windshield wiper intermittent and wipe/wash operation are implemented in most of the automobiles. The U642B controls all timing functions accurately at a reasonable price level. Interval pause and afterwiping time can be set to fixed values with the h

Automotive Wipe/Wash or Interval Switch

Description As a convenience feature of the windshield wiper intermittent and wipe/wash operation are implemented in most of the automobiles. The U642B controls all timing functions accurately at a reasonable price level. Interval pause and afterwiping time can be set to fixed values with the h

Military DC-DC Power Supplies

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