500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100% avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

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500V N-Channel MOSFET

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N 沟道 UniFETTM MOSFET 500V，22A，230mΩ

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。 •RDS(on) = 230mΩ （最大值）@ VGS = 10V, ID = 11A\n•低栅极电荷（典型值 45.6nC） \n•低 Crss（典型值 27pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，22 A，260 mΩ，TO-3P

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 UniFET FRFET® MOSFET 体二极管的反向恢复性能通过寿命控制方式得到加强。 其 trr 小于 100nsec 且反向 dv/dt 抗扰度为 15V/nsec，而一般的平面 MOSFET 产品分别为 200nsec 以上和 4.5V/nsec。 因此，它在 MOSFET 体二极管性能具有重要作用的某些应用中可消除多余的元件，并提高系统的可靠性。 该器件系列适用于开关电源转换器应用，如功 •RDS(on) = 220mΩ （典型值）@ VGS = 10V, ID = 11A\n•低栅极电荷（典型值 50nC） \n•低 Crss（典型值 27pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力\n•符合 RoHS 标准;

N-Channel MOSFET 500V, 22A, 0.26廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

500V N-Channel MOSFET

文件：405.26 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：740.08 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：885.06 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：740.08 Kbytes Page：9 Pages

N-Channel MOSFET 500V, 22A, 0.26廓

文件：378.48 Kbytes Page：8 Pages

SMPS MOSFET

Applications Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Charac

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. FEATURES • Repet

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

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