N-Channel MOSFET 500V, 22A, 0.26廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，22 A，260 mΩ，TO-3P

N-Channel MOSFET 500V, 22A, 0.26廓

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N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching sp

Low leakage current

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20A, 500V N-CHANNEL POWER MOSFET

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20A 500V N-channel Enhancement Mode Power MOSFET

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20A 500V N-channel enhanced field effect transistor

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