isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

功率 MOSFET，N 沟道，SUPERFET® II，800 V，14 A，400 mΩ，TO-220F

MOSFET – N-Channel, SUPERFET II 800 V, 11 A, 400 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

isc N-Channel MOSFET Transistor

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功率 MOSFET，N 沟道，SUPERFET® II，800 V，14 A，400 mΩ，TO-220

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F Ultra narrow lead

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D