Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. In addition, internal gate−source ESD

diode allows to withstand over 2 kV HBM surge stress. Consequently,

SUPERFET II MOSFET is very suitable for the switching power

applications such as Audio, Laptop adapter, Lighting, ATX power and

industrial power applications.

Features

• Typ. RDS(on) = 340 m

• Ultra Low Gate Charge (Typ. Qg = 43 nC)

• Low Eoss (Typ. 4.1 J @ 400 V)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)

• 100 Avalanche Tested

• ESD Improved Capacity

• These Devices are Pb−Free and are RoHS Compliant

Applications

• AC−DC Power Supply

• LED Lighting