600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

600V N-Channel MOSFET

Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ

Features • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semi

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current ID=20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in switching mode operation for system min-iaturization and higher e

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，TO-220

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

Power Factor Correction Converter Design

文件：682.46 Kbytes Page：15 Pages

20A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

Fast Switching

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N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15549 Mbytes Page：11 Pages

20A 600V N-channel enhanced field effect transistor

文件：833.85 Kbytes Page：6 Pages