位置：首页 > IC中文资料第4376页 > FCI11N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FCI11N60 | 600V N-Channel MOSFET 文件：581.16 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 |   | |
FCI11N60 | 600V N-Channel MOSFET 文件：974.53 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
FCI11N60 | 600V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
600V N-Channel MOSFET 文件：974.53 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge | INFINEON 英飞凌 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi | INFINEON 英飞凌 | |
FCI11N60产品属性
- 类型
描述
- 型号
FCI11N60
- 功能描述
MOSFET 600V NCH MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC/ON |
26+ |
原包装原封 □□ |
63384 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
FSC |
23+ |
I2PAK-3/TO-262-3 |
30 |
全新原装正品现货,支持订货 |
|||
Fairchild |
05+ |
500 |
优势货源原装正品 |
||||
FAIRCHILD/仙童 |
2223+ |
I2PAK-3TO-262-3 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
onsemi(安森美) |
25+ |
I2PAK(TO-262) |
18746 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
I2PAK(TO-262) |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FSC |
06+ |
I2PAK-3/TO-262-3 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
24+ |
8866 |
|||||
Fairchild/ON |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
FCI11N60规格书下载地址
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FCI11N60数据表相关新闻
FCD850N80Z
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2024-2-26FCB110N65F ;TO263正品货源供应商报价中文资料。
技术课程，原装现货买卖，资料详情
2021-10-20FCI连接器10120667-301LF原装现货
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-12-11FCI连接器61082-121602LF公司优势库存
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-12-11FCBS0550-智能功率模块（SPM）
一般描述 它是一种先进的智能功率模块（SPM）的飞兆半导体新开发和设计提供非常紧凑，高性能的交流电机驱动器主要是针对低功耗变频驱动的应用程序，比如说冰箱。它结合了优化保护电路和驱动器匹配低损耗的MOSFET。系统的可靠性得到进一步增强，综合欠压锁定和短路保护。高高速内置HVIC提供光耦合器无单电源MOSFET栅极驱动能力，进一步减少整体大小的逆变器系统的设计。每相电流逆变器可监视分别因负分直流端子。 特点 •UL认证No.E209204（SPM27- BA的包） •500伏- 5A型三相MOSFET逆变桥
2013-2-15
DdatasheetPDF页码索引
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