功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，71 mΩ，TO-247

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可去除额外元件，提高系统可靠性。 •700 V（TJ=150°C 时）\n•典型值 RDS(on) = 36 mΩ\n•超低栅极电荷（典型值 Qg = 229 nC）\n•低有效输出电容（典型值 Coss(eff.) = 631 pF）\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 4L

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 SuperFET II FRFET® MOSFET 的优化体二极管反向恢复性能可以去掉额外组件，提高系统可靠性。 •700 V（TJ=150°C 时）\n•典型值 RDS(on) = 36 mΩ\n•超低栅极电荷（典型值 Qg = 229 nC）\n•低有效输出电容（典型值 Coss(eff.) = 631 pF）\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 窄体 4L

SUPERFET II MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior s •700 V @ TJ = 150°C\n•Typ. RDS(on) = 36 mΩ\n•Ultra Low Gate Charge (Typ. Qg = 229 nC)\n•Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)\n•100% Avalanche Tested\n•RoHS Compliant;

N-Channel SuperFET짰 II FRFET짰 MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 76A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

丝印代码：GC041N65F；N-Channel Enhancement Mode Power MOSFET

Description The GC041N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters