功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 窄体 4L

SUPERFET II MOSFET is ON Semiconductor’s brand−new high\nvoltage super−junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on−resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior s •700 V @ TJ = 150°C\n•Typ. RDS(on) = 36 mΩ\n•Ultra Low Gate Charge (Typ. Qg = 229 nC)\n•Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)\n•100% Avalanche Tested\n•RoHS Compliant;