Dual-Channel Low Noise Amplifier 14GHz – 17GHz

Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin

包装：盒 描述：BOARD 开发板，套件，编程器 射频评估和开发套件，开发板

Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

文件：127.39 Kbytes Page：3 Pages

Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz

文件：127.39 Kbytes Page：3 Pages

P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode

ANX6923资料

文件：455.244 Kbytes Page：12 Pages

Dual P-Channel 12-V (D-S) MOSFET

文件：186.01 Kbytes Page：5 Pages

Simple Drive Requirement, Easy for Synchronous Buck Converter Application

文件：135.89 Kbytes Page：7 Pages