| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
F6923 | Dual-Channel Low Noise Amplifier 14GHz – 17GHz Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin | RENESAS 瑞萨 |   | |
F6923 | Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz 文件：127.39 Kbytes Page：3 Pages | RENESAS 瑞萨 | | |
F6923 | Dual-Channel Low Noise Amplifier for Ku/CDL-Band | RENESAS 瑞萨 | | |
Dual-Channel Low Noise Amplifier 14GHz – 17GHz Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin | RENESAS 瑞萨 | | ||
Dual-Channel Low Noise Amplifier 14GHz – 17GHz Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin | RENESAS 瑞萨 | | ||
Dual-Channel Low Noise Amplifier 14GHz – 17GHz Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin | RENESAS 瑞萨 | | ||
Dual-Channel Low Noise Amplifier 14GHz – 17GHz Features ■ Frequency: 14GHz - 17GHz ■ Gain: 19.5 dB ■ Noise figure: 1.5dB ■ Output P1dB: -1.5dBm ■ Power consumption: 16mW/ch ■ Channel isolation: 35dB ■ Supply voltage: 0.9V - 1.0V ■ Common bias control input ■ Compact size for planar integration on λ/2 grid ■ 2.7 × 2.7 × 0.9 mm, 23-pin | RENESAS 瑞萨 | | ||
Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz 文件：127.39 Kbytes Page：3 Pages | RENESAS 瑞萨 | | ||
Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz 文件：127.39 Kbytes Page：3 Pages | RENESAS 瑞萨 | | ||
Dual-Channel Low Noise Amplifier 13.75 ??17.3 GHz 文件：127.39 Kbytes Page：3 Pages | RENESAS 瑞萨 | | ||
包装：盒 描述：BOARD 开发板，套件，编程器 射频评估和开发套件，开发板 | ETC 知名厂家 | ETC | | |
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode | A-POWER 富鼎先进电子 | | ||
ANX6923资料 文件：455.244 Kbytes Page：12 Pages | | |||
Dual P-Channel 12-V (D-S) MOSFET 文件：186.01 Kbytes Page：5 Pages | AnalogPower | | ||
Simple Drive Requirement, Easy for Synchronous Buck Converter Application 文件：135.89 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FARADAY |
24+ |
QFP |
2500 |
||||
高通 |
25+ |
BGA |
860000 |
明嘉莱只做原装正品现货 |
|||
SHINDENGEN/新电元 |
25+ |
TO-252 |
450 |
全新原装正品支持含税 |
|||
Qualcomm |
23+ |
BGA |
7941 |
专注配单,只做原装进口现货 |
|||
原装 |
20+ |
SMD |
56200 |
原装优势主营型号-可开原型号增税票 |
|||
CHERRY |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
SHINDENGE/新电元 |
24+ |
TO252 |
60000 |
||||
MICR |
23+ |
SOP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IDT/RENESAS |
22+ |
FCCSP |
24500 |
瑞萨全系列在售 |
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DdatasheetPDF页码索引
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