| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
F128 | GaAs 低噪声放大器 | CETC55 | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim | POLYFET | |||
封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 128MBIT PARALLEL 56TSOP 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
IC FLASH 128M PARALLEL 56TSOP | SHARPSharp Corporation 夏普 | |||
IC FLASH 128M PARALLEL 56TSOP | SHARPSharp Corporation 夏普 | |||
封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 128MBIT PARALLEL 56TSOP 集成电路(IC) 存储器 | SHARPSharp Corporation 夏普 | |||
8-bit Microcontrollers 文件:1.55241 Mbytes Page:80 Pages | FUJITSU 富士通 | |||
8-bit Microcontrollers 文件:1.55241 Mbytes Page:80 Pages | FUJITSU 富士通 | |||
8-bit Microcontrollers 文件:1.55241 Mbytes Page:80 Pages | FUJITSU 富士通 | |||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching | PHILIPS 飞利浦 | |||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | |||
Silicon Complementary Transistors Audio Output, Video, Driver Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c | NTE | |||
Silicon Complementary Transistors General Purpose Amp Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability | NTE | |||
Silicon epitaxial planar type 文件:49.24 Kbytes Page:2 Pages | PANASONIC 松下 |
F128产品属性
- 类型
描述
- 存储器格式:
闪存
- 技术:
闪存
- 存储容量:
128Mb (16M x 8)
- 写周期时间 - 字,页:
75ns
- 访问时间:
75ns
- 存储器接口:
并联
- 电压 - 电源:
2.7V ~ 3.3V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装
- 封装/外壳:
56-TFSOP(0.724\,18.40mm 宽)
- 供应商器件封装:
56-TSOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
POLYFET |
23+ |
高频管 |
350 |
专营高频管模块,全新原装! |
|||
FUN-JIN |
2450+ |
DIP12 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SHARPMICROEL |
24+ |
56-TSOP |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Sharp Microelectronics |
22+ |
56TSOP |
9000 |
原厂渠道,现货配单 |
|||
IDT/RENESAS |
25+ |
VFQFPN |
24500 |
瑞萨全系列在售 |
|||
APTIV SERVICES 2 FRANCE SAS |
2026+ |
N/A |
6058 |
芯为深圳仓现货 |
|||
APTIV |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
APTIV |
25+ |
端子 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
POLYFET |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
ST |
23+ |
SOT23-5L |
28158 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
F128芯片相关品牌
F128规格书下载地址
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2020-7-28F16E27PJAR22,F21572PZ,F255500PG-Q,FMXALPPDIP1,GC1011A,GC1012B-PQ,GC2011A-PB,GC2011A-PQ,GC3011A-PQ,GC3011-PQ,GC3021A-PQ
F16E27PJAR22,F21572PZ,F255500PG-Q,FMXALPPDIP1,GC1011A,GC1012B-PQ,GC2011A-PB,GC2011A-PQ,GC3011A-PQ,GC3011-PQ,GC3021A-PQ
2019-12-12
DdatasheetPDF页码索引
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