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F128

GaAs 低噪声放大器

CETC55

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim

POLYFET

封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 128MBIT PARALLEL 56TSOP 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 128M PARALLEL 56TSOP

SHARPSharp Corporation

夏普

IC FLASH 128M PARALLEL 56TSOP

SHARPSharp Corporation

夏普

封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 128MBIT PARALLEL 56TSOP 集成电路(IC) 存储器

SHARPSharp Corporation

夏普

8-bit Microcontrollers

文件:1.55241 Mbytes Page:80 Pages

FUJITSU

富士通

8-bit Microcontrollers

文件:1.55241 Mbytes Page:80 Pages

FUJITSU

富士通

8-bit Microcontrollers

文件:1.55241 Mbytes Page:80 Pages

FUJITSU

富士通

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

NTE

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

NTE

Silicon epitaxial planar type

文件:49.24 Kbytes Page:2 Pages

PANASONIC

松下

F128产品属性

  • 类型

    描述

  • 存储器格式:

    闪存

  • 技术:

    闪存

  • 存储容量:

    128Mb (16M x 8)

  • 写周期时间 - 字,页:

    75ns

  • 访问时间:

    75ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.3V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    56-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    56-TSOP

更新时间:2026-8-4 9:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
POLYFET
23+
高频管
350
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FUN-JIN
2450+
DIP12
9850
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SHARPMICROEL
24+
56-TSOP
5000
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Sharp Microelectronics
22+
56TSOP
9000
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IDT/RENESAS
25+
VFQFPN
24500
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APTIV SERVICES 2 FRANCE SAS
2026+
N/A
6058
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APTIV
23+
NA
10000
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APTIV
25+
端子
5864
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POLYFET
23+
TO-59
8510
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ST
23+
SOT23-5L
28158
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