流量计算机，累加器和指示器

丝印代码：F1170；170 V, 1 A power Schottky rectifier

Features • Negligible switching losses • High junction temperature capability • Very small conduction losses • Low leakage current • Avalanche rated • ECOPACK2 component

丝印代码：F1170；Power Schottky rectifier

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer.

GENERAL DESCRIPTION This document describes the specifications for the IDTF1178 Zero-DistortionTM RF to IF Downconverting Dual Mixer. This device is part of a series of mixers offered with high side and/or low side injection options for all UTRA bands. See the Part# Matrix for pin compatible

Dual 3300 - 3800 MHz RF to IF Mixer

The IDT F1178 dual channel device operates with a single 5 V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 3300 to 3800 MHz with High or Low Side Injection. IF frequencies from 20 to 550 MHz are supported. matching modifications. Nominally, the device • Dual path for MIMO systems\n• 9.0 dB Gain; ultra linear\n• +39 dBm IP3O\n• Low NF ~ 9 dB\n• Extended LO level range for MIMO (-6 dBm)\n• 200 ohm output impedance\n• Very high +11 dBm P1dBI\n• Pin compatible with IDT's Zero-Distortion family\n• 6x6 mm 36-pin package\n• Individual path power down mo;

封装/外壳：36-WFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF-IF MIXER 3800MHZ 36VFQFPN RF/IF，射频/中频和 RFID 射频混频器

RF to IF Dual Downconverting Mixer

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封装/外壳：36-WFQFN 裸露焊盘 包装：卷带（TR）带 描述：VFQFPN 6.00X6.00X0.80 MM, 0.50MM RF/IF，射频/中频和 RFID 射频混频器

6-Pin DIP Optoisolator Transistor Output

The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Applications • Appliances, Measuring Instruments • General Purpose Switching Circuits • Programmable Controllers • Portable Electronics • Interfacing

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

3-Terminal Adjustable Regulator

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3-Terminal Adjustable Regulator

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