F112价格

参考价格:¥0.4515

型号:F112300 品牌:FCI 备注:这里有F112多少钱,2025年最近7天走势,今日出价,今日竞价,F112批发/采购报价,F112行情走势销售排行榜,F112报价。
型号 功能描述 生产厂家 企业 LOGO 操作
F112

流量计算机,累加器和指示器

ETC

知名厂家

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Polyfet

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

RENESAS

瑞萨

50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 19dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +32dBm at 3.55GHz Output P1dB = +18dBm at 3.55GHz Gain variation over temperature = ±0.15dB typical 50Ω single-ended input impedances 100Ω differential output impedances 3.3V or 5V p

RENESAS

瑞萨

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Totalizers electromechanic

文件:551.52 Kbytes Page:4 Pages

IVO

堡盟电子

Single-ended Input, Differential Output High Gain RF Amplifier

RENESAS

瑞萨

封装/外壳:12-WFQFN 裸露焊盘 包装:卷带(TR) 描述:VFQFPN 2.00X2.00X0.75 MM, 0.50MM RF/IF,射频/中频和 RFID 射频放大器

ETC

知名厂家

封装/外壳:12-WFQFN 裸露焊盘 包装:卷带(TR) 描述:VFQFPN 2.00X2.00X0.75 MM, 0.50MM RF/IF,射频/中频和 RFID 射频放大器

ETC

知名厂家

F1 Series 1 Watts High Voltage DC/DC Converters

ETC

知名厂家

Very compact housing, easy to route

文件:616.12 Kbytes Page:6 Pages

VINCOTECH

威科电子

Very compact housing, easy to route

文件:605.55 Kbytes Page:6 Pages

VINCOTECH

威科电子

Very compact housing, easy to route

文件:615.78 Kbytes Page:6 Pages

VINCOTECH

威科电子

Chassis Mount Single Secondary

文件:42.75 Kbytes Page:2 Pages

TRIAD

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

ALPHAWIRE

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

ALPHAWIRE

22x25mm Stratum 3 OCXO

文件:63.66 Kbytes Page:3 Pages

CTS

西迪斯

Temperature Sensors Line Guide

文件:736.09 Kbytes Page:11 Pages

Honeywell

霍尼韦尔

Easy Identification and Tracing with 10-color Cable

文件:782.9 Kbytes Page:2 Pages

ARIES

F112产品属性

  • 类型

    描述

  • 型号

    F112

  • 制造商

    POLYFET

  • 制造商全称

    Polyfet RF Devices

  • 功能描述

    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

更新时间:2025-12-24 23:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
20+
QFP-M100P
500
样品可出,优势库存欢迎实单
RENESAS(瑞萨)/IDT
24+
QFN12EP(2x2)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
MICREL
20+
SOT23-6
36800
原装优势主营型号-可开原型号增税票
IDT/RENESAS
22+
VFQFPN
24500
瑞萨全系列在售
TE
NA
46576
一级代理 原装正品假一罚十价格优势长期供货
MICREL/麦瑞
21+
SOT23-6
120000
长期代理优势供应
TI
24+
QFP-M100P
1280
TI
23+
TSSOP-20
20138
##公司主营品牌长期供应100%原装现货可含税提供技术
MORNSUN
2450+
DIP
6540
只做原厂原装正品终端客户免费申请样品
SYNOXO
18+
SOT-23-6
85600
保证进口原装可开17%增值税发票

F112数据表相关新闻